All Transistors. SCR. T1225 Datasheet

 

T1225 Triac DATASHEET

T1225 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 0.35 W
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 12 A
   Non repetitive surge peak on-state current (ITSM): 100 A
   Critical rate of rise of off-state voltage (dV/dt): 60 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 2.2 K/W
   Triggering gate voltage (VGT): 1.25 V
   Peak on-state voltage drop (VTM): 2 V
   Triggering gate current (IGT): 10 mA
   Holding current (IH): 15 mA

Package: TO‑220AB

 

T1225 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

T1225 Datasheet

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T1225
 datasheet

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T1225
 datasheet #2

Description

XL1225(T1225) 单向可控硅/THYRISTOR 特点:低成本,高容量。 Features: Intended for low cost high volume applications. 极限参数/Absolute maximum ratings(Ta=25℃) 测试条件 参数符号 数值 单位 Test condition Symbol Rating Unit V Tj=40 to 125℃ DRM 400 V (rgk=1kΩ) IT(RMS) Tc=40℃ 0.8 A IT(AV) Half cycle=180 0.5 A TC=40℃ VGRM IGR=10μA 1.0 V IGM 10μs Max 0.1 A PG(AV) 20ms Max 150 mW -40~ T j ℃ 125 -40~ TS

 
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