T1225 Triac DATASHEET
T1225 ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 0.35 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 12 A
Non repetitive surge peak on-state current (ITSM): 100 A
Critical rate of rise of off-state voltage (dV/dt): 60 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 2.2 K/W
Triggering gate voltage (VGT): 1.25 V
Peak on-state voltage drop (VTM): 2 V
Triggering gate current (IGT): 10 mA
Holding current (IH): 15 mA
Package: TO‑220AB
T1225 Datasheet
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Description
XL1225(T1225) 单向可控硅/THYRISTOR 特点:低成本,高容量。 Features: Intended for low cost high volume applications. 极限参数/Absolute maximum ratings(Ta=25℃) 测试条件 参数符号 数值 单位 Test condition Symbol Rating Unit V Tj=40 to 125℃ DRM 400 V (rgk=1kΩ) IT(RMS) Tc=40℃ 0.8 A IT(AV) Half cycle=180 0.5 A TC=40℃ VGRM IGR=10μA 1.0 V IGM 10μs Max 0.1 A PG(AV) 20ms Max 150 mW -40~ T j ℃ 125 -40~ TS
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |