T12M35T600B Triac DATASHEET

T12M35T600B ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 0.35 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 12 A
   Non repetitive surge peak on-state current (I_TSM): 90 A
   Critical repetitive rate of rise of on-state current (dI/dt): 10 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 40 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 62.5 K/W
   Junction to case thermal resistance (R_TH(j-c)): 2.2 K/W
   Triggering gate voltage (V_GT): 0.68 V
   Peak on-state voltage drop (V_TM): 1.85 V
   Triggering gate current (I_GT): 1.5 mA
   Holding current (I_H): 2.5 mA

Package: TO‑220AB

 

T12M35T600B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

T12M35T600B Datasheet

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Description

LITE-ON T12M35T-B SERIES SEMICONDUCTOR TRIACS Triacs 12 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES TO-220AB B L MAX. DIM. MIN. Blocking Voltage to 600 Volts M A C 14.22 15.88 Uniform Gate Trigger Currents in Three Quadrants, Q1, D B 9.65 10.67 Q2, and Q3 C A 2.54 3.43 K High Immunity to dv/dt — 400 V/us Min. at 125℃ D 5.84 6.86 E High Surge Current Capability — 100 Amperes PIN E 9.28 8.26 1 2 3 Pb Free Package F