T12M50F600B SCR DATASHEET

T12M50F600B ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum average on-state current (I_T(AVR)): 16 A
   Non repetitive surge peak on-state current (I_TSM): 220 A
   Critical repetitive rate of rise of on-state current (dI/dt): 125 A/µs
   Junction to case thermal resistance (R_TH(j-c)): 1 K/W
   Peak on-state voltage drop (V_TM): 2.2 V

 

T12M50F600B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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T12M50F600B Datasheet

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Description

LITE-ON T12M50F-B SERIES SEMICONDUCTOR TRIACS Triacs 12 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB TO-220AB FEATURES B L DIM. MIN. MAX. M Blocking Voltage to 600 Volts C A 14.22 15.88 All Diffused and Glass Passivated Junctions for D B 9.65 10.67 Greater Parameter Uniformity and Stability C A 2.54 3.43 K Gate Triggering Guaranteed in Four Modes D E 5.84 6.86 PIN Pb Free Package E 9.28 8.26 1 2 3 F - 6.35 F O G 14.73 12.70