T12M50T600B SCR DATASHEET

T12M50T600B ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum average on-state current (I_T(AVR)): 16 A
   Non repetitive surge peak on-state current (I_TSM): 330 A
   Critical repetitive rate of rise of on-state current (dI/dt): 125 A/µs
   Junction to case thermal resistance (R_TH(j-c)): 0.8 K/W
   Peak on-state voltage drop (V_TM): 2.2 V

 

T12M50T600B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

T12M50T600B Datasheet

Page #1

Page #2

Description

LITE-ON T12M50T600B SEMICONDUCTOR TRIACS Triacs 12 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES TO-220AB B L Blocking Voltage to 600 Volts MIN. MAX. DIM. M A C 14.22 15.88 On-state Current Rating of 12 Amperes RMS at 90℃ D B 9.65 10.67 Uniform Gate Trigger Currents in Three Quadrants C A 2.54 3.43 K High Immunity to dv/dt — 600 V/us Min. at 125℃ D 5.84 6.86 E PIN Minimizes Snubber Networks for Protection E 9.28 8.26 1