T1651N70TOH Triac DATASHEET
T1651N70TOH ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 16 A
Non repetitive surge peak on-state current (ITSM): 150 A
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 62.5 K/W
Junction to case thermal resistance (RTH(j-c)): 2 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 50 mA
Holding current (IH): 50 mA
Package: TO‑220AB
T1651N70TOH Datasheet
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Description
Technische Information / technical information Netz-Thyristor T1651N Phase Control Thyristor Key Parameters enndaten VDRM / VRRM 6000V … 7000V ITAVM 1670A (TC=85°C) ITSM 50000A 3570A (TC=55°C) vT0 1,22V rT 0,477mΩ RthJC 7,0K/kW Clamping Force 45 … 65kN Max. Diameter 121mm Contact Diameter 86mm Height 35mm For type designation please refer to actual shortform catalog http://www.ifbip.com/catalog Merkmale Features Volle Sperrfähigkeit 5
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |