T1971N40TOH Triac DATASHEET
T1971N40TOH ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 0.1 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 1 A
Non repetitive surge peak on-state current (ITSM): 10 A
Critical rate of rise of off-state voltage (dV/dt): 60 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
Junction to ambient thermal resistance (RTH(j-a)): 150 K/W
Junction to case thermal resistance (RTH(j-c)): 75 K/W
Triggering gate voltage (VGT): 0.66 V
Peak on-state voltage drop (VTM): 1.9 V
Triggering gate current (IGT): 3 mA
Holding current (IH): 1.5 mA
Package: TO‑92
T1971N40TOH Datasheet
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Description
Technische Information / technical information Netz-Thyristor T1971N Phase Control Thyristor Key Parameters enndaten VDRM / VRRM 3800V … 4400V ITAVM 1730A (TC=85°C) ITSM 40000A 3570A (TC=55°C) vT0 1,29V rT 0,33mΩ RthJC 8,0K/kW Clamping Force 36 … 52kN Max. Diameter 121mm Contact Diameter 86mm Height 26mm For type designation please refer to actual shortform catalog http://www.ifbip.com/catalog Merkmale Features Volle Sperrfähigkeit 50
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