T1M3F400A Triac Spec

T1M3F400A ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 0.1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 1 A
   Non repetitive surge peak on-state current (I_TSM): 10 A
   Critical rate of rise of off-state voltage (dV/dt): 60 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 150 K/W
   Junction to case thermal resistance (R_TH(j-c)): 75 K/W
   Triggering gate voltage (V_GT): 0.66 V
   Peak on-state voltage drop (V_TM): 1.9 V
   Triggering gate current (I_GT): 5 mA
   Holding current (I_H): 1.5 mA

Package: TO‑92

 

T1M3F400A Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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T1M3F400A Spec

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Description

LITE-ON T1M3F-A SERIES SEMICONDUCTOR TRIACs Sensitive Gate Triacs 1.0 AMPERES RMS Sillicon Bidirectional Thyristors 400 thru 600 VOLTS TO-92 (TO-226AA) FEATURES One-Piece, Injection-Molded Package TO-92 Blocking Voltage to 600 Volts DIM. MIN. MAX. Sensitive Gate Triggering in Four Trigger Modes A 4.45 4.70 (Quadrants) for all possible Combinations of Trigger B 4.32 5.33 Sources, and especially for Circuits that Source Gate 3.18 C 4.19 Drives D 1.15 1.39 All Di