All Transistors. SCR. T4003NH52TOH Datasheet

 

T4003NH52TOH Triac DATASHEET

T4003NH52TOH ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 4 A
   Non repetitive surge peak on-state current (ITSM): 30 A
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 2.6 K/W
   Triggering gate voltage (VGT): 1.3 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 10 mA

Package: TO‑252

 

T4003NH52TOH Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

T4003NH52TOH Datasheet

Page #1

T4003NH52TOH
 datasheet

Page #2

T4003NH52TOH
 datasheet #2

Description

Technische Information / technical information Netz-Thyristor T4003NH Phase Control Thyristor Key Parameters enndaten VBO / VRRM 5200V / 5200V ITAVM 3400A (TC=85°C) ITSM 105000A 3570A (TC=55°C) vT0 0,93V rT 0,145mΩ RthJC 4,5K/kW Clamping Force 90 … 130kN Max. Diameter 172,5mm Contact Diameter 115mm Height 40mm For type designation please refer to actual shortform catalog http://www.ifbip.com/catalog Merkmale Features  Direkt lichtgezünde

 
Back to Top