T4M10T600B Triac DATASHEET

T4M10T600B ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 0.1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 40 A
   Critical rate of rise of off-state voltage (dV/dt): 5 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 62.5 K/W
   Junction to case thermal resistance (R_TH(j-c)): 2.2 K/W
   Triggering gate voltage (V_GT): 0.62 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 1.8 mA
   Holding current (I_H): 1.5 mA

Package: TO‑220AB

 

T4M10T600B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

T4M10T600B Datasheet

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Description

LITE-ON T4M10T-B SERIES SEMICONDUCTOR TRIACS Sensitive Gate Triacs 4 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES Sensitive Gate Allows Triggering by Microcontrollers TO-220AB B L and other Logic Circuits DIM. MIN. MAX. M A C 14.22 High Immunity to dv/dt - 50 V/us Minimum at 125℃ 15.88 D B 9.65 10.67 Commutating di/dt - 3.0 A/ms Minimum at 125℃ C A 2.54 3.43 K Minimum and Maximum Values of IGT, VGT and IH D 5.84 6.86 E Spe