T4M10T600F Spec

T4M10T600F ELECTRICAL SPECIFICATIONS

 

   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 80 A

 

T4M10T600F Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

T4M10T600F Spec

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Description

LITE-ON T4M10T600F SEMICONDUCTOR TRIACS Triacs 4 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-126 FEATURES Passivated Die for Reliability and Uniformity Four-Quadrant Triggering Blocking Voltage to 600 V Low Level Triggering and Holding Characteristics Pb-Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 MAXIMUM RATINGS (Tj= 25℃ unless otherwise noticed) Rating Symbol Value Unit Peak Repetitive Of