T4M35T600B DATASHEET

T4M35T600B ELECTRICAL SPECIFICATIONS

 

   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum RMS on-state current (I_T(RMS)): 40 A

 

T4M35T600B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

T4M35T600B Datasheet

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Description

LITE-ON T4M35T-B SERIES SEMICONDUCTOR TRIACS Sensitive Gate Triacs 4 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES TO-220AB B L Blocking Voltage to 600 Volts DIM. MIN. MAX. M A C 14.22 15.88 On-State Current Rating of 4.0 Amperes RMS at 100℃ D B 9.65 10.67 Uniform Gate Trigger Currents in Three Modes C A 2.54 3.43 K High Immunity to dv/dt - 500 V/ms minimum at 125℃ D 5.84 6.86 E PIN Minimizes Snubber Networks for Protection E