T6411B Triac DATASHEET

T6411B ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum RMS on-state current (I_T(RMS)): 30 A
   Non repetitive surge peak on-state current (I_TSM): 300 A
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 2.5 V
   Triggering gate current (I_GT): 50 mA
   Holding current (I_H): 60 mA

Package: TO‑208AA

 

T6411B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

T6411B Datasheet

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Description

DI GI TRON S EMI CONDUCTORS T6411 SERIES BIDIRECTIONAL TRIODE THYRISTORS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Value Unit Repetitive peak off-stage voltage, gate open (TJ = -65 to +100°C) T6411B 200 VDRM Volts T6411D 400 T6411M 600 T6411N 800 RMS on-state current (conduction angle = 360°,