T660N26TOF SCR Spec

T660N26TOF ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum average on-state current (I_T(AVR)): 2500 A
   Non repetitive surge peak on-state current (I_TSM): 55000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 500 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Junction to case thermal resistance (R_TH(j-c)): 0.01 K/W
   Peak on-state voltage drop (V_TM): 2 V

 

T660N26TOF Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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T660N26TOF Spec

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Description

Datenblatt / Data sheet N Netz-Thyristor T660N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values 2200 V Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max VDRM,VRRM enndaten 2400 V repetitive peak forward off-state and reverse voltages 2600 V Elektrische Eigenschaften 2200 V Vorwärts-Stossspitzensperrspannung Tvj = -40°C... Tvj max VDSM 2400 V non-repetiti