T810-800B Spec

T810-800B ELECTRICAL SPECIFICATIONS

 

   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 900 A

 

T810-800B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

T810-800B Spec

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Description

isc Thyristors T810-800B DESCRIPTION ·With TO-252( DPAK ) packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control、Motor control circuits ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MAX UNIT V Repetitive peak off-state voltage 800 V DRM V Repetitive peak reverse voltag