All Transistors. SCR. T830N16TOF Datasheet

 

T830N16TOF Triac DATASHEET

T830N16TOF ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 8 A
   Non repetitive surge peak on-state current (ITSM): 80 A
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 100 K/W
   Junction to case thermal resistance (RTH(j-c)): 1.6 K/W
   Triggering gate voltage (VGT): 1.3 V
   Peak on-state voltage drop (VTM): 1.55 V
   Triggering gate current (IGT): 35 mA

Package: TO‑251

 

T830N16TOF Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

T830N16TOF Datasheet

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T830N16TOF
 datasheet

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T830N16TOF
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Description

Datenblatt / Data sheet N Netz-Thyristor T830N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values 1200 1600 V Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max VDRM,VRRM enndaten 1400 1800 V repetitive peak forward off-state and reverse voltages 1200 1600 V Vorwärts-Stossspitzensperrspannung Tvj = -40°C... Tvj max VDSM Elektrische Eigenschaften 1400 1800 V n

 
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