T8KC653203DH Triac DATASHEET

T8KC653203DH ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 0.35 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 8 A
   Non repetitive surge peak on-state current (I_TSM): 80 A
   Critical repetitive rate of rise of on-state current (dI/dt): 6.5 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 400 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 62.5 K/W
   Junction to case thermal resistance (R_TH(j-c)): 2.2 K/W
   Triggering gate voltage (V_GT): 0.69 V
   Peak on-state voltage drop (V_TM): 1.2 V
   Triggering gate current (I_GT): 13 mA
   Holding current (I_H): 20 mA

Package: TO‑220AB

 

T8KC653203DH Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

T8KC653203DH Datasheet

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Description

T8KC__3203 Phase Control Thyristor Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724)925-7272 325 Amperes 6500 Volts The T8KC is a high voltage, high current disc pack SCR employing a high di/dt gate structure. This gate design allows the SCR to be reliably operated at high di/dt and dv/dt conditions in various phase control applications. FEATURES: Low On-State Voltage High di/dt Capability High dv/dt Capability Hermetic Ceramic Package Excellent Sur