T8M10F-600B Triac DATASHEET

T8M10F-600B ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum peak gate power (P_GM): 0.5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 8 A
   Non repetitive surge peak on-state current (I_TSM): 100 A
   Critical rate of rise of off-state voltage (dV/dt): 5 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 2.2 K/W
   Triggering gate voltage (V_GT): 0.9 V
   Peak on-state voltage drop (V_TM): 1.55 V
   Triggering gate current (I_GT): 12 mA
   Holding current (I_H): 6 mA

Package: TO‑220AB

T8M10F-600B Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

T8M10F-600B Datasheet

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Description

LITE-ON T8M10F-600B SEMICONDUCTOR TRIACS Sensitive Gate Triacs 8 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES TO-220AB B L Sensitive Gate Triggering in 3 Modes for AC Triggering DIM. MIN. MAX. M C A 14.22 15.88 on Sinking Current Sources D B 9.65 10.67 Four Mode Triggering for Drive Circuits that Source A C 2.54 3.43 K Current D E 5.84 6.86 All Diffused and Glass-Passivated Junctions for PIN E 9.28 8.26 1 2 3 Parameter Unifor

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. T8M10F-600B Datasheet