T8M25F600B Triac DATASHEET

T8M25F600B ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 0.35 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 8 A
   Non repetitive surge peak on-state current (I_TSM): 80 A
   Critical repetitive rate of rise of on-state current (dI/dt): 6.5 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 62.5 K/W
   Junction to case thermal resistance (R_TH(j-c)): 2.2 K/W
   Triggering gate voltage (V_GT): 0.69 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 16 mA
   Holding current (I_H): 30 mA

Package: TO‑220AB

 

T8M25F600B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

T8M25F600B Datasheet

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Description

LITE-ON T8M25F600B SEMICONDUCTOR TRIACS Sensitive Gate Triacs 8 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES TO-220AB B L Blocking Voltage 600 Volts M DIM. MIN. MAX. C A 14.22 15.88 All Diffused and Glass Passivated Junctions for D B 9.65 10.67 Greater Parameter Uniformity and Stability A K C 2.54 3.43 Small, Rugged, Thermowatt Construction for Low E D 5.84 6.86 Thermal Resistance, High Heat Dissipation and PIN E 9.28 8.26 1 2