T8M35T600B Triac DATASHEET

T8M35T600B ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 0.5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 8 A
   Non repetitive surge peak on-state current (I_TSM): 80 A
   Critical rate of rise of off-state voltage (dV/dt): 25 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 60 K/W
   Junction to case thermal resistance (R_TH(j-c)): 2 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.65 V
   Triggering gate current (I_GT): 5 mA
   Holding current (I_H): 10 mA

Package: TO‑220AB

 

T8M35T600B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

T8M35T600B Datasheet

Page #1

Page #2

Description

LITE-ON T8M35T-B SERIES SEMICONDUCTOR TRIACS Triacs 8 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES TO-220AB Blocking Voltage to 600 Volts B L DIM. MIN. MAX. M On-State Current Rating of 8.0 Amperes RMS at 100℃ A C 14.22 15.88 D Uniform Gate Trigger Currents in Three Quadrants B 9.65 10.67 High Immunity to dv/dt - 400 V/ms minimum at 125℃ C A 2.54 3.43 K D Minimizes Snubber Networks for ProtectionIndustry 5.84 6.86 E PIN E 9.28