T8M50F600B Triac DATASHEET
T8M50F600B ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 0.35 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 8 A
Non repetitive surge peak on-state current (ITSM): 70 A
Critical repetitive rate of rise of on-state current (dI/dt): 10 A/µs
Critical rate of rise of off-state voltage (dV/dt): 75 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
Junction to ambient thermal resistance (RTH(j-a)): 62.5 K/W
Junction to case thermal resistance (RTH(j-c)): 2.2 K/W
Triggering gate voltage (VGT): 0.62 V
Peak on-state voltage drop (VTM): 1.85 V
Triggering gate current (IGT): 2 mA
Holding current (IH): 3 mA
Package: TO‑220AB
T8M50F600B Datasheet
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Description
LITE-ON T8M50F-B SERIES SEMICONDUCTOR TRIACS Triacs 8 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES Blocking Voltage to 600 Volts TO-220AB B L DIM. MIN. MAX. All Diffused and Glass Passivated Junctions for M A C 14.22 15.88 Greater Parameter Uniformity and Stability D B 9.65 10.67 Small, Rugged, Thermowatt Construction for Low C A 2.54 3.43 K Thermal Resistance, High Heat Dissipation and D 5.84 6.86 E Durability PIN E 9.28 8.



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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |