All Transistors. SCR. T8M50F600B Datasheet

 

T8M50F600B Triac DATASHEET

T8M50F600B ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 0.35 W
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 8 A
   Non repetitive surge peak on-state current (ITSM): 70 A
   Critical repetitive rate of rise of on-state current (dI/dt): 10 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 75 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
   Junction to ambient thermal resistance (RTH(j-a)): 62.5 K/W
   Junction to case thermal resistance (RTH(j-c)): 2.2 K/W
   Triggering gate voltage (VGT): 0.62 V
   Peak on-state voltage drop (VTM): 1.85 V
   Triggering gate current (IGT): 2 mA
   Holding current (IH): 3 mA

Package: TO‑220AB

 

T8M50F600B Replacements

< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

T8M50F600B Datasheet

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T8M50F600B
 datasheet

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T8M50F600B
 datasheet #2

Description

LITE-ON T8M50F-B SERIES SEMICONDUCTOR TRIACS Triacs 8 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES Blocking Voltage to 600 Volts TO-220AB B L DIM. MIN. MAX. All Diffused and Glass Passivated Junctions for M A C 14.22 15.88 Greater Parameter Uniformity and Stability D B 9.65 10.67 Small, Rugged, Thermowatt Construction for Low C A 2.54 3.43 K Thermal Resistance, High Heat Dissipation and D 5.84 6.86 E Durability PIN E 9.28 8.

 
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