T8M50T600B SCR DATASHEET

T8M50T600B ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 3200 V
   Maximum average on-state current (I_T(AVR)): 940 A
   Non repetitive surge peak on-state current (I_TSM): 17000 A

 

T8M50T600B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

T8M50T600B Datasheet

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Description

LITE-ON T8M50T600B SEMICONDUCTOR TRIACS Sensitive Gate Triacs 8 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES TO-220AB Blocking Voltage to 600 Volts B L DIM. MIN. MAX. M On-State Current Rating of 8.0 Amperes RMS at 100℃ A C 14.22 15.88 Uniform Gate Trigger Currents in Three Quadrants D B 9.65 10.67 High Immunity to dv/dt - 500 V/ms minimum at 125℃ C A 2.54 3.43 K Minimizes Snubber Networks for Protection D 5.84 6.86 E PIN E