T8M5T600B SCR DATASHEET

T8M5T600B ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 3600 V
   Maximum average on-state current (I_T(AVR)): 940 A
   Non repetitive surge peak on-state current (I_TSM): 17000 A

 

T8M5T600B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

T8M5T600B Datasheet

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Description

LITE-ON T8M5T600B SEMICONDUCTOR TRIACS Sensitive Gate Triacs 8 AMPERES RMS Sillicon Bidirectional Thyristors 600 VOLTS TO-220AB FEATURES TO-220AB Sensitive Gate Allows Triggering by Microcontrollers B L DIM. MIN. MAX. and other Logic Circuits M A C 14.22 15.88 Uniform Gate Trigger Currents in Three Quadrants; Q1, D B 9.65 10.67 Q2, and Q3 C A 2.54 3.43 K High Immunity to dv/dt - 25 V/_s Minimum at 110℃ D 5.84 6.86 E High Commutating di/dt - 8.0 A/ms Mi