TFD312SN SCR DATASHEET

TFD312SN ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 1.3 W
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum average on-state current (I_T(AVR)): 3.2 A
   Maximum RMS on-state current (I_T(RMS)): 5 A
   Non repetitive surge peak on-state current (I_TSM): 30 A
   Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 62.5 K/W
   Junction to case thermal resistance (R_TH(j-c)): 3.5 K/W
   Triggering gate voltage (V_GT): 0.6 V
   Peak on-state voltage drop (V_TM): 1.7 V
   Triggering gate current (I_GT): 0.06 mA
   Holding current (I_H): 5 mA

Package: TO‑220

 

TFD312SN Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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TFD312SN Datasheet

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Description

TO-220F 3A Thyristor with built-in Avalanche diode TFD312S series Features External Dimensions 4.2± 0.2 (Unit: mm) 10.0± 0.2 φ 3.3± 0.2 2.8 C 0.5 With built-in Avalanche diode Average on-state current: I =3A T(AV) A Gate trigger current: I =10mA max GT a b Isolation voltage: V =1500V(50Hz AC, RMS, 1min.) ISO 1.35± 0.15 G 1.35± 0.15 +0.2 K 0.85–0.1 +0.2 2.4± 0.2 2.54 2.54 0.45 –0.1 2.2± 0.2 (1). Cathode(K) a. Part Number (2). Anode (A) b. Lot Numbe