All Transistors. SCR. TFD312SO Datasheet

 

TFD312SO SCR DATASHEET

TFD312SO ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 1.3 W
   Maximum repetitive peak and off-state voltage (VDRM): 300 V
   Maximum average on-state current (IT(AVR)): 3.2 A
   Maximum RMS on-state current (IT(RMS)): 5 A
   Non repetitive surge peak on-state current (ITSM): 30 A
   Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
   Junction to ambient thermal resistance (RTH(j-a)): 62.5 K/W
   Junction to case thermal resistance (RTH(j-c)): 3.5 K/W
   Triggering gate voltage (VGT): 0.6 V
   Peak on-state voltage drop (VTM): 1.7 V
   Triggering gate current (IGT): 0.06 mA
   Holding current (IH): 5 mA

Package: TO‑220

 

TFD312SO Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

TFD312SO Datasheet

Page #1

TFD312SO
 datasheet

Page #2

TFD312SO
 datasheet #2

Description

TO-220F 3A Thyristor with built-in Avalanche diode TFD312S series Features External Dimensions 4.2± 0.2 (Unit: mm) 10.0± 0.2 φ 3.3± 0.2 2.8 C 0.5 With built-in Avalanche diode Average on-state current: I =3A T(AV) A Gate trigger current: I =10mA max GT a b Isolation voltage: V =1500V(50Hz AC, RMS, 1min.) ISO 1.35± 0.15 G 1.35± 0.15 +0.2 K 0.85–0.1 +0.2 2.4± 0.2 2.54 2.54 0.45 –0.1 2.2± 0.2 (1). Cathode(K) a. Part Number (2). Anode (A) b. Lot Numbe

 
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