TIC116E Triac DATASHEET

TIC116E ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 1.3 W
   Maximum repetitive peak and off-state voltage (V_DRM): 100 V
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 25 A
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 62.5 K/W
   Junction to case thermal resistance (R_TH(j-c)): 7.8 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.3 V
   Triggering gate current (I_GT): 5 mA
   Holding current (I_H): 4 mA

Package: TO‑220

 

TIC116E Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

TIC116E Datasheet

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Description

SEMICONDUCTORS TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M, TIC116N, TIC116S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • 8 A Continuous On-State Current • 80 A Surge-Current • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 20 mA • Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings Unit A B C D E M S N Repetitive peak off-state voltage VDRM 100 200 300 400 500 600 700 800 V (see Note1) VRRM Re