TIC116S Triac Spec

TIC116S ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 1.3 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 25 A
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 62.5 K/W
   Junction to case thermal resistance (R_TH(j-c)): 7.8 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.3 V
   Triggering gate current (I_GT): 5 mA
   Holding current (I_H): 4 mA

Package: TO‑220

 

TIC116S Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

TIC116S Spec

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Description

TIC116 SERIES SILICON CONTROLLED RECTIFIERS ● 8 A Continuous On-State Current ● 80 A Surge-Current TO-220 PACKAGE (TOP VIEW) ● Glass Passivated Wafer K 1 ● 400 V to 800 V Off-State Voltage A 2 ● Max IGT of 20 mA G 3 Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIC116D 400 TIC116M 600 Repetitive peak off-state voltage VDRM V TIC116S 700 TIC11