TIC126C Triac DATASHEET
TIC126C ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 2.2 W
Maximum repetitive peak and off-state voltage (VDRM): 100 V
Maximum RMS on-state current (IT(RMS)): 6 A
Non repetitive surge peak on-state current (ITSM): 60 A
Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
Junction to ambient thermal resistance (RTH(j-a)): 62.5 K/W
Junction to case thermal resistance (RTH(j-c)): 2.5 K/W
Triggering gate voltage (VGT): 2.2 V
Peak on-state voltage drop (VTM): 1.7 V
Triggering gate current (IGT): 5 mA
Holding current (IH): 30 mA
Package: TO‑220
TIC126C Datasheet
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Description
SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • 12 A Continuous On-State Current • 100 A Surge-Current • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 20 mA • Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings Unit A B C D E M S N Repetitive peak off-state voltage VDRM 100 200 300 400 500 600 700 800 V (see Note1) VRRM
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |