TIC206D Triac Spec

TIC206D ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum peak gate power (P_GM): 2.2 W
   Maximum repetitive peak and off-state voltage (V_DRM): 300 V
   Maximum RMS on-state current (I_T(RMS)): 8 A
   Non repetitive surge peak on-state current (I_TSM): 70 A
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 62.5 K/W
   Junction to case thermal resistance (R_TH(j-c)): 2.5 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 11.7 mA
   Holding current (I_H): 4.7 mA

Package: TO‑220

TIC206D Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

TIC206D Spec

Page #1

Page #2

Description

SEMICONDUCTORS TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S SILICON BIDIRECTIONAL TRIODE THYRISTOR • 4 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 5 mA (Quadrants 1-3) • Sensitive gate triacs • Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. ABSO

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500

SCR & TRIAC. TIC206D PDF. Equivalents Search