TIC216B Triac DATASHEET

TIC216B ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 2.2 W
   Maximum repetitive peak and off-state voltage (V_DRM): 700 V
   Maximum RMS on-state current (I_T(RMS)): 8 A
   Non repetitive surge peak on-state current (I_TSM): 70 A
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 62.5 K/W
   Junction to case thermal resistance (R_TH(j-c)): 2.5 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 11.7 mA
   Holding current (I_H): 4.7 mA

Package: TO‑220

 

TIC216B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

TIC216B Datasheet

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Description

SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S SILICON TRIACS • 6 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 5 mA (Quadrants 1-3) • Sensitive gate triacs • Compliance to ROH ABSOLUTE MAXIMUM RATINGS Value Unit Symbol Ratings A B D M S N Repetitive peak off-state voltage VDRM 100 200 400 600 700 800 V (see Note1) Full-cycle RMS on-state current at (or below) IT(RMS) 6 A 70°C case temperature (