TIC236E SCR DATASHEET

TIC236E ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 2 A
   Non repetitive surge peak on-state current (I_TSM): 15 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Triggering gate voltage (V_GT): 1 V
   Peak on-state voltage drop (V_TM): 1.5 V
   Triggering gate current (I_GT): 0.2 mA
   Holding current (I_H): 5 mA

Package: TO92

 

TIC236E Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

TIC236E Datasheet

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Description

SEMICONDUCTORS TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M, TIC236N, TIC236S SILICON TRIACS • High current triacs • 12 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 50 mA (Quadrants 1-3) • Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings Unit A B C D E M S N Repetitive peak off-state voltage VDRM 100 200 300 400 500 600 700 800 V (see Note1) Full-cycle RMS on-state current IT(RMS) at (or be