TIC246B DATASHEET

TIC246B ELECTRICAL SPECIFICATIONS

 

Package: TO‑209AB

 

TIC246B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

TIC246B Datasheet

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Description

SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S SILICON BIDIRECTIONAL TRIODE THYRISTOR • High current triacs • 16 A RMS • 70 A Peak • Glass Passivated Wafer • 200 V to 800 V Off-State Voltage • Max IGT of 50 mA (Quadrants 1-3) • 125 A peak current • Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate si