TIC246D Triac DATASHEET
TIC246D ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 5 W
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum RMS on-state current (IT(RMS)): 12 A
Non repetitive surge peak on-state current (ITSM): 120 A
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 3 K/W
Triggering gate voltage (VGT): 0.8 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 12 mA
Holding current (IH): 20 mA
Package: TO220F
TIC246D Datasheet
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Description
TIC246 SERIES SILICON TRIACS ● High Current Triacs TO-220 PACKAGE (TOP VIEW) ● 16 A RMS MT1 1 ● Glass Passivated Wafer MT2 2 ● 400 V to 800 V Off-State Voltage G 3 ● 125 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3) Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIC246D 400 TIC246M 600 Repetitive peak off-state voltage (see Note 1) VDRM
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |