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TIC246D Triac DATASHEET

TIC246D ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 5 W
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum RMS on-state current (IT(RMS)): 12 A
   Non repetitive surge peak on-state current (ITSM): 120 A
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 3 K/W
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 12 mA
   Holding current (IH): 20 mA

Package: TO220F

 

TIC246D Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

TIC246D Datasheet

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TIC246D
 datasheet

Page #2

TIC246D
 datasheet #2

Description

TIC246 SERIES SILICON TRIACS ● High Current Triacs TO-220 PACKAGE (TOP VIEW) ● 16 A RMS MT1 1 ● Glass Passivated Wafer MT2 2 ● 400 V to 800 V Off-State Voltage G 3 ● 125 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3) Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIC246D 400 TIC246M 600 Repetitive peak off-state voltage (see Note 1) VDRM

 
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