TIC246E Triac DATASHEET

TIC246E ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 12 A
   Non repetitive surge peak on-state current (I_TSM): 120 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 3 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 12 mA
   Holding current (I_H): 20 mA

Package: TO220F

 

TIC246E Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

TIC246E Datasheet

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Description

SEMICONDUCTORS TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N, TIC246S SILICON BIDIRECTIONAL TRIODE THYRISTOR • High current triacs • 16 A RMS • 70 A Peak • Glass Passivated Wafer • 200 V to 800 V Off-State Voltage • Max IGT of 50 mA (Quadrants 1-3) • 125 A peak current • Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate si