TIC246N Triac DATASHEET

TIC246N ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum average on-state current (I_T(AVR)): 25 A
   Maximum RMS on-state current (I_T(RMS)): 240 A
   Peak on-state voltage drop (V_TM): 1.3 V
   Triggering gate current (I_GT): 30 mA

Package: TO‑3PF

 

TIC246N Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

TIC246N Datasheet

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Description

TIC246 SERIES SILICON TRIACS ● High Current Triacs TO-220 PACKAGE (TOP VIEW) ● 16 A RMS MT1 1 ● Glass Passivated Wafer MT2 2 ● 400 V to 800 V Off-State Voltage G 3 ● 125 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3) Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIC246D 400 TIC246M 600 Repetitive peak off-state voltage (see Note 1) VDRM