All Transistors. SCR. TS1220-600H Datasheet

 

TS1220-600H SCR DATASHEET

TS1220-600H ELECTRICAL SPECIFICATIONS

 

Type: SCR

Maximum repetitive peak and off-state voltage (VDRM): 600 V

Maximum average on-state current (IT(AVR)): 8 A

Maximum RMS on-state current (IT(RMS)): 12 A

Non repetitive surge peak on-state current (ITSM): 110 A

Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs

Critical rate of rise of off-state voltage (dV/dt): 5 V/µs

Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C

Junction to ambient thermal resistance (RTH(j-a)): 100 K/W

Junction to case thermal resistance (RTH(j-c)): 1.3 K/W

Triggering gate voltage (VGT): 0.8 V

Peak on-state voltage drop (VTM): 1.6 V

Triggering gate current (IGT): 0.2 mA

Holding current (IH): 5 mA

Package: TO-251

 

TS1220-600H Replacements

SYMBOL VALUES UNITS
Type
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package

 

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TS1220-600H Datasheet

Page #2

TS1220-600H
 datasheet

Page #2

TS1220-600H
 datasheet #2

Description

TN1215, TS1220 TYN612, TYN812, TYN1012 Sensitive and standard 12 A SCRs A Features A ■ On-state rms current, IT(RMS) 12 A K A G G ■ Repetitive peak off-state voltage, VDRM/VRRM K DPAK 600 to 1000 V TN1215-xxxB A ■ Triggering gate current, IGT 0.2 to 15 mA TS1220-xxxB A K A Description G D2PAK Available either in sensitive (TS1220) or standard TN1215-xxxG (TN1215 / TYNx12) gate triggering levels, the K TS1220-xxxG 12 A SCR series is suitable to fit all mo

 
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