TS1220-600T SCR DATASHEET

TS1220-600T ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum peak gate power (P_GM): 0.5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum average on-state current (I_T(AVR)): 10 A
   Non repetitive surge peak on-state current (I_TSM): 500 A
   Critical repetitive rate of rise of on-state current (dI/dt): 1500 A/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 80 K/W
   Junction to case thermal resistance (R_TH(j-c)): 5 K/W
   Triggering gate voltage (V_GT): 1 V
   Peak on-state voltage drop (V_TM): 1.5 V
   Triggering gate current (I_GT): 20 mA
   Holding current (I_H): 7 mA

Package: TO‑262

TS1220-600T Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

TS1220-600T Datasheet

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Description

TN1215, TS1220 TYN612, TYN812, TYN1012 Sensitive and standard 12 A SCRs A Features A ■ On-state rms current, IT(RMS) 12 A K A G G ■ Repetitive peak off-state voltage, VDRM/VRRM K DPAK 600 to 1000 V TN1215-xxxB A ■ Triggering gate current, IGT 0.2 to 15 mA TS1220-xxxB A K A Description G D2PAK Available either in sensitive (TS1220) or standard TN1215-xxxG (TN1215 / TYNx12) gate triggering levels, the K TS1220-xxxG 12 A SCR series is suitable to fit all mo

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. TS1220-600T Datasheet