TS820-800BG SCR-module DATASHEET

TS820-800BG ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum peak gate power (P_GM): 3 W
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum average on-state current (I_T(AVR)): 320 A
   Maximum RMS on-state current (I_T(RMS)): 520 A
   Non repetitive surge peak on-state current (I_TSM): 9100 A
   Critical repetitive rate of rise of on-state current (dI/dt): 250 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.02 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 1.44 V
   Triggering gate current (I_GT): 150 mA
   Holding current (I_H): 300 mA

 

TS820-800BG Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
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TS820-800BG Datasheet

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Description

TS820-600B(800B)G SCRs Simplified outline TO-252 Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Symbol Features • Blocking voltage to 800 V • a On-state RMS current to 8 A k • Ultra low gate trigger current g Descrip