TSM-HV200 SCR-module DATASHEET

TSM-HV200 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum peak gate power (P_GM): 3 W
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum average on-state current (I_T(AVR)): 320 A
   Maximum RMS on-state current (I_T(RMS)): 520 A
   Non repetitive surge peak on-state current (I_TSM): 9100 A
   Critical repetitive rate of rise of on-state current (dI/dt): 250 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.02 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 1.44 V
   Triggering gate current (I_GT): 150 mA
   Holding current (I_H): 300 mA

 

TSM-HV200 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

TSM-HV200 Datasheet

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Description

Film capacitors – Power Factor Correction Key components – Thyristor module TSM-HV Series/Type: TSM-HV200 Ordering code: B44066T0200E690 Date: June 2012 Version: 6 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the table and then change the color to "white". This ensures that the table disappears (invisible) for the customer PDF. Don't change formatting when entering or pasting text in the table and don't add