TSM-LC10 SCR-module DATASHEET
TSM-LC10 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 3 W
Maximum repetitive peak and off-state voltage (VDRM): 1000 V
Maximum average on-state current (IT(AVR)): 320 A
Maximum RMS on-state current (IT(RMS)): 520 A
Non repetitive surge peak on-state current (ITSM): 9100 A
Critical repetitive rate of rise of on-state current (dI/dt): 250 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.02 K/W
Triggering gate voltage (VGT): 2 V
Peak on-state voltage drop (VTM): 1.44 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 300 mA
TSM-LC10 Datasheet
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Description
Film capacitors – Power Factor Correction Key components – Thyristor module TSM-LC Series/Type: TSM-LC10 Ordering code: B44066T0010E402 Date: June 2012 Version: 3 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the table and then change the color to "white". This ensures that the table disappears (invisible) for the customer PDF. Don't change formatting when entering or pasting text in the table and don't add a
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |