TSM-LC100 SCR-module DATASHEET
TSM-LC100 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 3 W
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 320 A
Maximum RMS on-state current (IT(RMS)): 520 A
Non repetitive surge peak on-state current (ITSM): 9100 A
Critical repetitive rate of rise of on-state current (dI/dt): 250 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.02 K/W
Triggering gate voltage (VGT): 2 V
Peak on-state voltage drop (VTM): 1.44 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 300 mA
TSM-LC100 Datasheet
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Description
Film Capacitors – Power Factor Correction Thyristor Module TSM-LC100 Series/Type: TSM-LC100 Ordering code: B44066T0100E402 Date: August 2010 Version: 2 entered in headers and footers! Please fill in the Film Capacitors – Power Factor Correction Thyristor Module TSM-LC100 Ordering code: (top right header bar) B44066T0100E402 Series/Type: (top right header bar) TSM-LC100 Preliminary data (optional): (if necessary) Department: FILM PFC PM Date: August 2010 Version
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |