TSM-LC200 SCR-module DATASHEET
TSM-LC200 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum peak gate power (PGM): 3 W
Maximum repetitive peak and off-state voltage (VDRM): 1400 V
Maximum average on-state current (IT(AVR)): 320 A
Maximum RMS on-state current (IT(RMS)): 520 A
Non repetitive surge peak on-state current (ITSM): 9100 A
Critical repetitive rate of rise of on-state current (dI/dt): 250 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.02 K/W
Triggering gate voltage (VGT): 2 V
Peak on-state voltage drop (VTM): 1.44 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 300 mA
TSM-LC200 Datasheet
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Description
Film Capacitors – Power Factor Correction Thyristor Module TSM-LC for Dynamic PFC Series/Type: TSM-LC200 Ordering code: B44066T0200E402 Date: August 2010 Version: 5 entered in headers and footers! Please fill in the Don't change formatting when entering or pasting text in the table and don't add any cell or line in and to it! Identification/Classification 1 Film Capacitors – Power Factor Correction (header 1 + top left bar): Identification/Classification 2 Thyristor Modu
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |