TSN10A80 SCR DATASHEET

TSN10A80 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum average on-state current (I_T(AVR)): 16 A
   Maximum RMS on-state current (I_T(RMS)): 25 A
   Non repetitive surge peak on-state current (I_TSM): 314 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 60 K/W
   Junction to case thermal resistance (R_TH(j-c)): 2 K/W
   Triggering gate voltage (V_GT): 1.3 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 40 mA
   Holding current (I_H): 50 mA

Package: TO‑220AB

 

TSN10A80 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

TSN10A80 Datasheet

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Description

THYRISTOR Type：TSN10A80 １０Ａ, ８００Ｖ 構造： シリコンプレーナ型逆導通サイリスタ 用途： ＨＩＤランプ点灯用 コンデンサ放電制御用 バラスト回路用 ■ 最大定格 項 目 記号 条 件 定 格 値 単位 繰り返しピ－クオフ電圧 ＶＤ Ｍ Ｔ j＝25℃ ８００ Ｖ Ｒ ＴＣ≦100℃，ＶＤＭ≦400V 繰り返しピークオン電流 ＩＧ≧80mA，dig/dt≧0.5A/μs ＩＴ Ｍ ５００ Ａ �