All Transistors. SCR. TXDV812 Datasheet

 

TXDV812 SCR DATASHEET

TXDV812 ELECTRICAL SPECIFICATIONS

 

   Type: SCR

 

TXDV812 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

TXDV812 Datasheet

Page #1

TXDV812
 datasheet

Page #2

TXDV812
 datasheet #2

Description

INCHANGE Semiconductor isc Thyristors TXDV812 DESCRIPTION ·With TO-220 packaging ·High operating junction temperature ·Very high commutation performancemaximized at each gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High temperature, high power motor control ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MIN UNIT V Repeti

 
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