TYN1225RG SCR DATASHEET
TYN1225RG ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 10 W
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum average on-state current (IT(AVR)): 2.5 A
Maximum RMS on-state current (IT(RMS)): 4 A
Non repetitive surge peak on-state current (ITSM): 60 A
Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
Junction to case thermal resistance (RTH(j-c)): 2.5 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.8 V
Triggering gate current (IGT): 15 mA
Holding current (IH): 30 mA
Package: TO220AB
TYN1225RG Datasheet
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Description
TN2540, TXN625 TYN625, TYN825, TYN1225 Standard 25 A SCRs Features A ■ On-state rms current, IT(RMS) 25 A ■ Repetitive peak off-state voltage, VDRM/VRRM G 600 to 1200 V K ■ Triggering gate current, IGT 40 mA ■ Insulated package TO-220AB ins A A – Insulating voltage 2500 V rms – UL1557 certified (file ref. E81734) K A K G Description A G These standard 25 A SCRs are suitable for D2PAK TO-220AB general purpose applications. (TN2540-x00G) (TYNx25RG) Using c
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |