All Transistors. SCR. TYN16X-800RT Datasheet

 

TYN16X-800RT SCR DATASHEET

TYN16X-800RT ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum average on-state current (IT(AVR)): 8 A
   Maximum RMS on-state current (IT(RMS)): 12 A
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 1.3 K/W
   Triggering gate voltage (VGT): 1.3 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 15 mA
   Holding current (IH): 30 mA

Package: TO‑220

 

TYN16X-800RT Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

TYN16X-800RT Datasheet

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TYN16X-800RT
 datasheet

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TYN16X-800RT
 datasheet #2

Description

TYN16X-800RT SCR 21 March 2014 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C). 2. Features and benefits • High junction operating temperature capability • High thermal cycling performance • High voltage capa

 
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