TYN20B-800T SCR DATASHEET

TYN20B-800T ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum RMS on-state current (I_T(RMS)): 16 A
   Non repetitive surge peak on-state current (I_TSM): 200 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 1.25 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.5 V
   Triggering gate current (I_GT): 32 mA

Package: TO‑220

 

TYN20B-800T Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

TYN20B-800T Datasheet

Page #1

Page #2

Description

TYN20B-800T SCR 21 March 2014 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT404 (D2PAK) surface mountable plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C). 2. Features and benefits • High bidirectional blocking voltage capability • High junction operating temperature capability • H