TYN616F SCR DATASHEET
TYN616F ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum average on-state current (IT(AVR)): 8 A
Maximum RMS on-state current (IT(RMS)): 12 A
Non repetitive surge peak on-state current (ITSM): 140 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
Junction to case thermal resistance (RTH(j-c)): 1.3 K/W
Triggering gate voltage (VGT): 1.3 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 15 mA
Holding current (IH): 30 mA
Package: TO‑220AB
TYN616F Datasheet
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Description
INCHANGE Semiconductor isc Thyristors TYN616F APPLICATIONS ·It is suitable to fit all modes of control found in applications such as over voltage crowbar protection,motor control circuits in power tools and kitchen aids,in-rush current limiting circuits, Capacitive discharge ignition, voltage regulation circuits etc. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MIN UNIT V Repetitive peak
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |