URSF05G49-3P SCR DATASHEET

URSF05G49-3P ELECTRICAL SPECIFICATIONS

Type: SCR
Maximum repetitive peak and off-state voltage (V_DRM): 600 V

URSF05G49-3P Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

URSF05G49-3P Datasheet

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Description

URSF05G49-1P,URSF05G49-3P,URSF05G49-5P TOSHIBA THYRISTOR SILICON PLANAR TYPE URSF05G49-1P,URSF05G49-3P,URSF05G49-5P Unit: mm LOW POWER SWITCHING AND CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : V = 400V DRM Repetitive Peak Reverse Voltage : VRRM = 400V Average On-State Current : I = 500mA T (AV) Reduce a Quantity of Parts and Manufacturing Process Because of Built-in R : R = 1kΩ, 2.7kΩ, 5.1kΩ (Typ.) GK GK MAXIMUM RATINGS CHARACTERISTIC SYMBOL

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. URSF05G49-3P Datasheet