All Transistors. SCR. VS-12TTS08S-M3 Datasheet

 

VS-12TTS08S-M3 SCR DATASHEET

VS-12TTS08S-M3 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 1000 V
   Maximum average on-state current (IT(AVR)): 180 A
   Peak on-state voltage drop (VTM): 1.35 V
   Triggering gate current (IGT): 0.07 mA

Package: TO‑209AB

 

VS-12TTS08S-M3 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

VS-12TTS08S-M3 Datasheet

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VS-12TTS08S-M3
 datasheet

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VS-12TTS08S-M3
 datasheet #2

Description

VS-12TTS08S-M3 Series www.vishay.com Vishay Semiconductors Thyristor Surface Mount, Phase Control SCR, 8 A FEATURES 2 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according JEDEC®-JESD47 2 • Material categorization:  3 For definitions of compliance please see 1 3 1 www.vishay.com/doc?99912 Cathode Gate TO-263AB (D2PAK) APPLICATIONS • Input rectification and crow-bar (soft start) PRODUCT SUMMARY • Vishay in

 
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