VS-12TTS08S-M3 SCR DATASHEET

VS-12TTS08S-M3 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1000 V
   Maximum average on-state current (I_T(AVR)): 180 A
   Peak on-state voltage drop (V_TM): 1.35 V
   Triggering gate current (I_GT): 0.07 mA

Package: TO‑209AB

VS-12TTS08S-M3 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

VS-12TTS08S-M3 Datasheet

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Description

VS-12TTS08S-M3 Series www.vishay.com Vishay Semiconductors Thyristor Surface Mount, Phase Control SCR, 8 A FEATURES 2 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according JEDEC®-JESD47 2 • Material categorization:  3 For definitions of compliance please see 1 3 1 www.vishay.com/doc?99912 Cathode Gate TO-263AB (D2PAK) APPLICATIONS • Input rectification and crow-bar (soft start) PRODUCT SUMMARY • Vishay in

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. VS-12TTS08S-M3 Datasheet