VS-25TTS08S-M3 SCR DATASHEET

VS-25TTS08S-M3 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum average on-state current (I_T(AVR)): 35 A
   Peak on-state voltage drop (V_TM): 1.45 V
   Triggering gate current (I_GT): 0.15 mA

Package: TO‑247AC

VS-25TTS08S-M3 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

VS-25TTS08S-M3 Datasheet

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Description

VS-25TTS08S-M3, VS-25TTS12S-M3 Series www.vishay.com Vishay Semiconductors Thyristor, Surface Mount, Phase Control SCR, 16 A FEATURES Anode • Meets MSL level 1, per J-STD-020, LF maximum 2 peak of 260 °C • Designed and qualified according JEDEC®-JESD47 2 • Material categorization:  3 For definitions of compliance please see 1 3 1 Cathode Gate www.vishay.com/doc?99912 TO-263AB (D2PAK) APPLICATIONS • Input rectification (soft start) PRODUCT SUMMARY • Vish

LIST

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